Navitas and EPFL demo 250kW solid-state transformer
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Microelectronics
5 March 2026
Navitas and EPFL demo 250kW solid-state transformer
In booth #2027 at the IEEE Applied Power Electronics Conference (APEC 2026) in San Antonio, Texas (22–26 March), Navitas Semiconductor Corp of Torrance, CA, USA is exhibiting a 250kW solid-state transformer (SST) platform developed by the Power Electronics Laboratory of Switzerland’s École Polytechnique Fédérale de Lausanne (EPFL) that enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.
The EPFL design uses a single-stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC ultrahigh-voltage (UHV) 3300V and high-voltage (HV) 1200V silicon carbide (SiC) Trench-Assisted Planar (TAP) MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory’s project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL’s actual data center.
“This engagement with EPFL demonstrates how next-generation medium-voltage power conversion can directly address the growing energy and thermal challenges inside AI data centers,” says Paul Wheeler, VP & general manager of the SiC business unit at Navitas. “By combining our 3300V and 1200V GeneSiC MOSFETs and modules with a novel single-stage solid-state transformer architecture and advanced real-time control, we are enabling a scalable 800V-DC distribution approach that delivers higher efficiency from the grid to the rack while creating new opportunities for heat reuse,” he adds.
“This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable and efficient interface between the medium-voltage AC grid and an 800V-DC data-center architecture, while serving as a real-world experimental environment for advanced distributed control,” says Drazen Dujic, associate professor & director of the Power Electronics Laboratory at EPFL. “By leveraging Navitas UHV and HV SiC MOSFETs portfolio, EPFL was able to optimize system performance for the highest efficiency and optimal design margins for system robustness and reliability.”
See related items:
Navitas unveils fifth-generation SiC Trench-Assisted Planar MOSFET technology
Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
